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Journals

81. “Emergence of Interlayer Coherence in Twist-Controlled Graphene Double Layers,” Kenneth A. Lin, Nitin Prasad, G. William Burg, Bo Zou, Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Allan H MacDonald, and Emanuel Tutuc, Physical Review Letters 129, 187701 (2022)

 

80. “Emergence of Correlations in Alternating Twist Quadrilayer Graphene,” G. William Burg, Eslam Khalaf, Yimeng Wang, Kenji Watanabe, Takashi Taniguchi, and Emanuel Tutuc, Nature Materials 21, 884-889 (2022)

 

79. “Twisted 2D Electronic and Photonic Materials and Devices,” Emanuel Tutuc and Xiaoqin Elaine Li, Applied Physics Letters 120, 130401 (2022)

 

78. “Bulk and Edge Properties of Twisted Double Bilayer Graphene,” Yimeng Wang, Jonah Herzog-Arbeitman, G. William Burg, Jihang Zhu, Kenji Watanabe, Takashi Taniguchi, Allan H. MacDonald, B. Andrei Bernevig, and Emanuel Tutuc, Nature Physics 18, 48-53 (2022)

 

77. “Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures,” Nitin Prasad, G. William Burg, Kenji Watanabe, Takashi Taniguchi, Leonard F. Register, and Emanuel Tutuc, Physical Review Letters 127, 117701 (2021)

 

76. “Electron Mobility in Monolayer WS2 Encapsulated in Hexagonal Boron-Nitride,” Yimeng Wang, Thibault Sohier, Kenji Watanabe, Takashi Taniguchi, Matthieu J. Verstraete, and Emanuel Tutuc, Applied Physics Letters 118, 102105 (2021)

 

75. “The Marvels of Moiré Materials,” Eva Y. Andrei, Dmitri K. Efetov, Pablo Jarillo-Herrero, Allan H. MacDonald, Kin Fai Mak, T. Senthil, Emanuel Tutuc, Ali Yazdani, and Andrea F. Young, Nature Review Materials 6, 201-206 (2021)

 

74. “Epitaxial Al-InAs Heterostructures as Platform for Josephson Junction Field-Effect Transistor Logic Devices,” Feng Wen, Joseph Yuan, Kaushini S. Wickramasinghe, William Mayer, Javad Shabani, and Emanuel Tutuc, IEEE Transactions on Electron Devices 68 (4), 1524-1529 (2021)

 

73. “Mean Free Path Suppression of Low-Frequency Phonons in SiGe Nanowires,” Brandon Smith, Gabriella Fleming, Kevin D. Parrish, Feng Wen, Evan Fleming, Karalee Jarvis, Emanuel Tutuc, Alan J. H. McGaughey, and Li Shi, Nano Letters 20 (11), 8384-8391 (2020)

 

72. “Flat Bands in Twisted Bilayer Transition Metal Dichalcogenides,” Zhiming Zhang, Yimeng Wang, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Emanuel Tutuc, and Brian J. LeRoy, Nature Physics 16, 1093-1096 (2020)

 

71. “InSb Pixel Loaded Microwave Resonator for High-speed Mid-wave Infrared Detection,” Yinan Wang, Sukrith Dev, Frank Yang, Leland Nordin, Yimeng Wang, Andrew Briggs, Monica Allen, Jeffery Allen, Emanuel Tutuc, and Daniel Wasserman, Infrared Physics & Technology 109, 103390 (2020)

 

70. “Room-Temperature Mid-Infrared Detection via Resonant Microwave Circuits,” Sukrith Dev, Yinan Wang, Yimeng Wang, Monica Allen, Jeffery Allen, Emanuel Tutuc, and Daniel Wasserman, IEEE Transactions on Electron Devices 67 (4), 1632-1638 (2020)

 

69. “Tunneling and Fluctuating Electron-Hole Cooper Pairs in Double Bilayer Graphene,” Dmitry K. Efimkin, G. William Burg, Emanuel Tutuc, and Allan H. MacDonald, Physical Review B 101, 035413 (2020)

 

68. “Interlayer Exciton Laser of Extended Spatial Coherence in Atomically Thin Heterostructures,” Eunice Y. Paik, Long Zhang, G. William Burg, Rahul Gogna, Emanuel Tutuc, and Hui Deng, Nature 576, 80–84 (2019)

 

67. “Josephson Junction Field-Effect Transistors for Boolean Logic Cryogenic Applications,” Feng Wen, Javad Shabani, and Emanuel Tutuc, IEEE Transactions on Electron Devices, 66 (12), 5367-5374 (2019)

 

66. “Correlated Insulating States in Twisted Double Bilayer Graphene,” G. William Burg, Jihang Zhu, Takashi Taniguchi, Kenji Watanabe, Allan H. MacDonald, and Emanuel Tutuc, Physical Review Letters 123, 197702 (2019)

 

65. “Highly Valley-polarized Singlet and Triplet Interlayer Excitons in van der Waals Heterostructure,” Long Zhang, Rahul Gogna, G. William Burg, Jason Horng, Eunice Paik, Yu-Hsun Chou, Kyounghwan Kim, Emanuel Tutuc, and Hui Deng, Physical Review B 100, 041402(R) (2019)

 

64. “Measurement of Carrier Lifetime in Micron-scaled Materials Using Resonant Microwave Circuits,” Sukrith Dev, Yinan Wang, Kyounghwan Kim, Marziyeh Zamiri, Clark Kadlec, Michael Goldflam, Samuel Hawkins, Eric Shaner, Jin Kim, Sanjay Krishna, Monica Allen, Jeffery Allen, Emanuel Tutuc, and Daniel Wasserman, Nature Communications 10, 1625 (2019)

 

63. “Thermal Conductivity Measurement and Analysis of Ge-SixGe1−x Core–shell Nanowires,” Hyunjoon Park, Junkyu Han, David C. Dillen, Joonsuk Park, Changho Kim, Minhyung Sim, Junghyo Nah, Jongwoo Lim, Emanuel Tutuc, and Jae Hun Seol, Applied Physics Express 12 (4), 045001 (2019)

 

62. “Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers,” Fengcheng Wu, Timothy Lovorn, Emanuel Tutuc, Ivar Martin, and A. H. MacDonald, Physical Review Letters 122, 086402 (2019)

61. “Evidence for Moiré Excitons in van der Waals Heterostructures,” Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Kyounghwan Kim, Amritesh Rai, Daniel A. Sanchez, Jiamin Quan, Akshay Singh, Jacob Embley, André Zepeda, Marshall Campbell, Travis Autry, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K. Banerjee, Kevin L. Silverman, Suenne Kim, Emanuel Tutuc, Li Yang, Allan H. MacDonald, and Xiaoqin Li, Nature 567, 71-75 (2019) 

60. “Strained SixGe1−x-Ge-Si Core-double-shell Nanowire Heterostructures for Simultaneous Hole and Electron Mobility Enhancement,” Feng Wen and Emanuel Tutuc, Applied Physics Letters 113, 113102 (2018)

59. “Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures,” Kyounghwan Kim, Nitin Prasad, Hema C. P. Movva, G. William Burg, Yimeng Wang, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, and Emanuel Tutuc, Nano Letters 18 (9), 5967-5973 (2018)

58. “Topologically Protected Helical States in Minimally Twisted Bilayer Graphene,” Shengqiang Huang, Kyounghwan Kim, Dmitry K. Efimkin, Timothy Lovorn, Takashi Taniguchi, Kenji Watanabe, Allan H. MacDonald, Emanuel Tutuc, and Brian J. LeRoy, Physical Review Letters 121, 037702 (2018)

57. “Large Effective Mass and Interaction-enhanced Zeeman Splitting of K-valley Electrons in MoSe2,” Stefano Larentis, Hema CP Movva, Babak Fallahazad, Kyounghwan Kim, Armand Behroozi, Takashi Taniguchi, Kenji Watanabe, Sanjay K Banerjee, and Emanuel Tutuc, Physical Review B 97, 201407(R) (2018)

56. “Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe2 Heterostructures,” G. William Burg, Nitin Prasad, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Allan H. MacDonald, Leonard F. Register, and Emanuel Tutuc, Physical Review Letters 120 (17), 177702 (2018)

55. “Photonic-crystal Exciton-polaritons in Monolayer Semiconductors,” Long Zhang, Rahul Gogna, G. William Burg, Emanuel Tutuc, and Hui Deng, Nature Communications 9 (1), 713 (2018)

54. “ReS2-based Interlayer Tunnel Field Effect Transistor,” Omar B. Mohammed, Hema CP Movva, Nitin Prasad, Amithraj Valsaraj, Sangwoo Kang, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee, Journal of Applied Physics 122 (24), 245701 (2018)

53. “Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1–x Nanowires,” Feng Wen and Emanuel Tutuc, Nano Letters 18 (1), 94-100 (2017)

52. “Interlayer Tunnel Field-effect Transistor (ITFET): Physics, Fabrication and Applications,” Sangwoo Kang, Xuehao Mou, Babak Fallahazad, Nitin Prasad, Xian Wu, Amithraj Valsaraj, Hema CP Movva, Kyounghwan Kim, Emanuel Tutuc, Leonard F. Register, and Sanjay K. Banerjee, Journal of Physics D: Applied Physics 50 (38), 383002 (2017)

51. “Transport Spectroscopy in Bilayer Graphene Using Double Layer Heterostructures,” Kayoung Lee, Jeil Jung, Babak Fallahazad, and Emanuel Tutuc, 2D Materials 4 (3), 035018 (2017)

50. “Shell Morphology and Raman Spectra of Epitaxial Ge−SixGe1−x and Si−SixGe1−x Core-shell Nanowires,” Feng Wen, David C. Dillen, Kyounghwan Kim, and Emanuel Tutuc, Journal of Applied Physics 121, 234302 (2017)

49. “Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures,” G. William Burg, Nitin Prasad, Babak Fallahazad, Amithraj Valsaraj, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Qingxiao Wang, Moon J. Kim, Leonard F. Register, and Emanuel Tutuc, Nano Letters 17 (6), 3919-3925 (2017)

48. “Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits,” Stefano Larentis, Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Amritesh Rai, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc, ACS Nano 11 (5), 4832-4839 (2017)

47. “Tunable Moiré Bands and Strong Correlations in Small-twist-angle Bilayer Graphene,” Kyounghwan Kim, Ashley DaSilva, Shengqiang Huang, Babak Fallahazad, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, Allan H. MacDonald, and Emanuel Tutuc, Proceedings of the National Academy of Sciences 114 (13), 3364-3369 (2017)

46. “Laser Spike Annealing for Shallow Junctions in Ge CMOS,” William Hsu, Feng Wen, Xiaoru Wang, Yun Wang, Andrei Dolocan, Anupam Roy, Taegon Kim, Emanuel Tutuc, and Sanjay K. Banerjee, IEEE Transactions on Electron Devices 64 (2), 346-352 (2017)

45. “Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors,” Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Xuehao Mou, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee, Nano Letters 16 (8), 4975-4981 (2016)

44. “Giant Frictional Drag in Double Bilayer Graphene Heterostructures,” Kayoung Lee, Jiamin Xue, David C. Dillen, Kenji Watanabe, Takashi Taniguchi, and Emanuel Tutuc, Physical Review Letters 117, 046803 (2016)

43. “High Phosphorous Dopant Activation in Germanium Using Laser Spike Annealing,” William Hsu, Xiaoru Wang, Feng Wen, Yun Wang, Andrei Dolocan, Taegon Kim, Emanuel Tutuc, and Sanjay K. Banerjee, IEEE Electron Device Letters 37 (9), 1088-1091 (2016)

42. “Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility,” Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc, Physical Review Letters 116, 086601 (2016)

41. “van der Waals Heterostructures with High Accuracy Rotational Alignment,” Kyounghwan Kim, Matthew Yankowitz, Babak Fallahazad, Sangwoo Kang, Hema C. P. Movva, Shengqiang Huang, Stefano Larentis, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Brian J. LeRoy, and Emanuel Tutuc, Nano Letters 16 (3), 1989-1995 (2016)

40. “Coherently Strained Si–SixGe1–x Core–Shell Nanowire Heterostructures,” David C. Dillen, Feng Wen, Kyounghwan Kim, and Emanuel Tutuc, Nano Letters 16 (1), 392-398 (2016)

39. “Strain and Hole Gas Induced Raman Shifts in Ge–SixGe1–x Core–Shell Nanowires Using Tip-Enhanced Raman Spectroscopy,” Zhongjian Zhang, David C. Dillen, Emanuel Tutuc, and Edward T. Yu, Nano Letters 15 (7), 4303-4310 (2015)

38. “Band Alignment in WSe2–Graphene Heterostructures,” Kyounghwan Kim, Stefano Larentis, Babak Fallahazad, Kayoung Lee, Jiamin Xue, David C. Dillen, Chris M. Corbet, and Emanuel Tutuc, ACS Nano 9 (4), 4527-4532 (2015)

37. “Gate-tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures,” Babak Fallahazad, Kayoung Lee, Sangwoo Kang, Jiamin Xue, Stefano Larentis, Christopher Corbet, Kyounghwan Kim, Hema C. P. Movva, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Sanjay K. Banerjee, and Emanuel Tutuc, Nano Letters 15 (1), 428-433 (2015)

36. “Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2,” Chris M. Corbet, Connor McClellan, Amritesh Rai, Sushant Sudam Sonde, Emanuel Tutuc, and Sanjay K. Banerjee, ACS Nano 9 (1), 363-370 (2014)

35. “Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and its Tunneling Mechanisms”, Chris M. Corbet, Connor McClellan, Kyounghwan Kim, Sushant Sonde, Emanuel Tutuc, and Sanjay K. Banerjee, ACS Nano 8 (10), 10480-10485 (2014)

34. “Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene”, Kayoung Lee, Babak Fallahazad, Jiamin Xue, David C. Dillen, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, and Emanuel Tutuc, Science 345, 58-61 (2014)

33. “Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures”, Stefano Larentis, John R. Tolsma, Babak Fallahazad, David C. Dillen, Kyounghwan Kim, Allan H. MacDonald, and Emanuel Tutuc, Nano Letters 14 (4), 2039-2045 (2014)

32. “Radial Modulation Doping in Core-shell Nanowires”, David C. Dillen, Kyounghwan Kim, En-Shao Liu, and Emanuel Tutuc, Nature Nanotechnology 9, 116-120 (2014)

31. “Realization and Scaling of Ge-Si1-xGex Core-Shell Nanowire n-FETs” En-Shao Liu, David C. Dillen, Junghyo Nah, Babak Fallahazad, Kyounghwan Kim, and Emanuel Tutuc, IEEE Transactions on Electron Devices 60 (12), 4027-4033 (2013)

30. “Transport Gap in Dual-gated Graphene Bilayers Using Oxides as Dielectrics”, Kayoung Lee, Babak Fallahazad, Hongki Min, and Emanuel Tutuc, IEEE Transactions on Electron Devices 60 (1), 103-108 (2013)

29. “Field-effect Transistors and Intrinsic Mobility in Ultra-thin MoSe2 Layers”, Stefano Larentis, Babak Fallahazad, and Emanuel Tutuc, Applied Physics Letters 101, 223104 (2012)

28. “Raman Spectroscopy and Strain Mapping in Individual Ge-SixGe1-x Core-shell Nanowires”, David C. Dillen, K. M. Varahramyan, Chris M. Corbet, and Emanuel Tutuc, Physical Review B 86, 045311 (2012)

27. “Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition”, Babak Fallahazad, Yufeng Hao, Kayoung Lee, Seyoung Kim, R. S. Ruoff, and Emanuel Tutuc, Physical Review B 85, 201408 (2012)

26. “Direct Measurement of the Fermi Energy in Graphene Using a Double-layer Heterostructure”, Seyoung Kim, Insun Jo, David C. Dillen, D. A. Ferrer, Babak Fallahazad, Z. Yao, Sanjay K. Banerjee, and Emanuel Tutuc, Physical Review Letters 108, 116404 (2012)

25. “Scaling of Al2O3 Dielectric for Graphene Field-effect Transistors”, B. Fallahazad, K. Lee, G. Lian, S. Kim, C. M. Corbet, D. A. Ferrer, L. Colombo, E. Tutuc, Appl. Phys. Lett. 100, 093112 (2012)

24. “Role of Confinement on Carrier Transport in Ge-SixGe1-x Core-shell nanowires”, Junghyo Nah, David C. Dillen, Kamran M. Varahramyan, Sanjay K. Banerjee, and Emanuel Tutuc, Nano Letters 12 (1), 108-112 (2012)

23. “Magnetotransport Properties of Quasi-free-standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking”, Kayoung Lee, Seyoung Kim, M. S. Points, T. E. Beechem, Taisuke Ohta, and Emanuel Tutuc, Nano Letters 11 (9), 3624-3628 (2011)

22. “Spin-polarized to Valley-polarized Transition in Graphene Bilayers at ν = 0 in High Magnetic Fields”, Seyoung Kim, Kayoung Lee, and Emanuel Tutuc, Physical Review Letters 107, 016803 (2011)

21. “Coulomb Drag of Massless Fermions in Graphene”, Seyoung Kim, Insun Jo, Junghyo Nah, Z. Yao, Sanjay K. Banerjee, and Emanuel Tutuc, Physical Review B 83, 161401 (2011)

20. “Low-frequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene”, Insun Jo, I-Kai Hsu, Yong J. Lee, Mir Mohammad Sadeghi, Seyoung Kim, Stephen Cronin, Emanuel Tutuc, Sanjay K. Banerjee, Zhen Yao, and Li Shi, Nano Letters 11 (1), 85-90 (2011)

19. “High Performance Wire-array Silicon Solar Cells”, O. Gunawan, K. Wang, B. Fallahazad, Y. Zhang, E. Tutuc, and S. Guha, Progress in Photovoltaics: Research and Applications 19, 307 (2011)

18. “On the Fabrication of Three-dimensional Silicon-on-insulator Based Optical Phased Array for Agile and Large Angle Laser Beam Steering Systems”, Amir Hosseini, David Kwong, Yang Zhang, Saurabh A. Chandorkar, Filip Crnogorac, Andrew Carlson, Babak Fallahazad, Seth Bank, Emanuel Tutuc, John Rogers, R. Fabian W. Pease, and Ray T. Chen, Journal of Vacuum Science & Technology B 28, C6O1 3511508 (2010)

17. “Hall Mobility Measurements in Enhancement-mode GaAs Field-effect Transistors with Al2O3 Gate Dielectric”, D. Shahrjerdi, J. Nah, B. Hekmatshoar, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee, Applied Physics Letters 97, 213506 (2010)

16. “Graphene for CMOS and Beyond CMOS Applications”, Sanjay K. Banerjee, Leonard F. Register, Emanuel Tutuc, Dipanjan Basu, Seyoung Kim, Dharmendar Reddy, and Allan H. MacDonald, Proceedings of the IEEE 98 (12), 2032 (2010)

15. “Wire Textured, Multi-crystalline Si Solar Cells Created Using Self-assembled Masks”, Kejia Wang, Oki Gunawan, Naim Moumen, George Tulevski, Hisham Mohamed, Babak Fallahazad, Emanuel Tutuc, and Supratik Guha, Optics Express 18, A568 (2010)

14. “Lateral Spin Injection in Germanium Nanowires”, En-Shao Liu, Junghyo Nah, Kamran M. Varahramyan, and Emanuel Tutuc, Nano Letters 10 (9), 3297-3301 (2010)

13. “Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric”, Babak Fallahazad, Seyoung Kim, Luigi Colombo, and Emanuel Tutuc, Applied Physics Letters 97 (12), 123105 (2010)

12. “Enhanced-performance Germanium Nanowire Tunneling Field-effect Transistors using Flash-assisted Rapid Thermal Process”, Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan, David C. Dillen, Steve McCoy, Jason Chan, and Emanuel Tutuc, IEEE Electron Device Letters 31 (12), 1359 (2010)

11. “Ge-SixGe1-x Core-shell Nanowire Tunneling Field-effect Transistors,” Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan, and Emanuel Tutuc, IEEE Transactions on Electron Devices 57 (8), 1883 (2010)

10. “Effects of Si-cap Thickness and Temperature on Device Performance of Si/Ge1-xCx/Si p-MOSFETs”, Mustafa Jamil, En-Shao Liu, Fahmida Ferdousi, Joseph P. Donnelly, Emanuel Tutuc, and Sanjay K. Banerjee, Semiconductor Science and Technology 25, 045005 (2010)

9. “Role of Metal-semiconductor Contact in Back-gated Nanowire Field-effect-transistor”, En-Shao Liu, Nitesh Jain, Kamran M. Varahramyan, Junghyo Nah, Sanjay K. Banerjee, and Emanuel Tutuc, IEEE Transactions on Nanotechnology 9 (2), 237 (2010)

8. “Scaling Properties of Ge-SixGe1-x Core-shell Nanowire Field-effect Transistors”, Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan, Davood Shahrjerdi, Sanjay K. Banerjee, and Emanuel Tutuc, IEEE Transactions on Electron Devices 57 (2), 491 (2010)

7. “Band Engineered Epitaxial Ge-SixGe1-x Nanowire Core-shell Heterostructures”, K. M. Varahramyan, D. Ferrer, E. Tutuc, S. K. Banerjee, Applied Physics Letters 95, 033101 (2009)

6. “Large Area Synthesis of High-quality and Uniform Graphene Films”, Xuesong Li, Weiwei Cai, Jinho An, Seyoung Kim, Junghyo Nah, Dongxing Yang, Richard Piner, Aruna Velamakanni, Inhwa Jung, Emanuel Tutuc, Sanjay K. Banerjee, Luigi Colombo, and Rodney S. Ruoff, Science 324, 1312 (2009)

5. “Negative Differential Resistance in Buried-channel GexC1-x pMOSFETs”, En-Shao Liu, David Q. Kelly, Joseph P. Donnelly, Emanuel Tutuc, and Sanjay K. Banerjee, IEEE Electron Device Letterse 30 (2), 136 (2009)

4. “Realization Dual-gated Ge-SixGe1-x Core-shell Nanowire Field Effect Transistors with Highly Doped Source and Drain”, Junghyo Nah, En-Shao Liu, D. Shahrjerdi, K. M. Varahramyan, Sanjay K. Banerjee, and Emanuel Tutuc, Applied Physics Letters 94, 063117 (2009)

3. “Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Thin Al2O3 Dielectrics”, Seyoung Kim, Junghyo Nah, Insun Jo, Davood Shahrjerdi, Luigi Colombo, Zhen Yao, Emanuel Tutuc, and Sanjay K. Banerjee, Applied Physics Letters 94, 062107 (2009)

2. “Opportunities for Group IV Nanowire Devices in Si CMOS Technology”, Emanuel Tutuc, Sanjay Banerjee, J. Nah, Kamran Varahramyan, N. Jain, and D. Ferrer, Electrochemical Society Transactions 16, 735 (2008)

1. “Doping of Ge-SixGe1-x Core-shell Nanowires Using Low Energy Ion Implantation”, Junghyo Nah, K. Varahramyan, En-Shao Liu, Sanjay K. Banerjee, and Emanuel Tutuc, Applied Physics Letters 93, 203108 (2008)

Conferences

40. “Spin Hall Effect in Monolayer and Bilayer WSe2,” B. Fallahazad, Hema C. P. Movva, X. Li, T. Taniguchi, K. Watanabe, Q. Nui, S. Banerjee, and E. Tutuc, APS March Meeting 2017, March 13-17, New Orleans, LA, U.S.A.

39. “Colossal Coulomb Drag in Double Bilayer Graphene Heterostructures,” K. Lee, J. Xue, T. Taniguchi, K. Watanabe, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

38. “Resonant Tunneling in Double Bilayer Graphene Heterostructures,” B. Fallahazad, K. Lee, S. Kang, J. Xue, S. Larentis, C. M. Corbet, K. Kim, H. Movva, T. Taniguchi, K. Watanabe, L. Register, S. Banerjee, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

37. “Semiconducting Behavior, Schottky Barriers and Field Effect Transistors in Ultrathin Rhenium DiSulfide,” C. M. Corbet, C. McClellan, A. Rai, S. Sonde, E. Tutuc, and S. Banerjee, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

36. “Conduction and Valence Band Offsets in WSe2-Graphene Heterostructures,” K. Kim, S. Larentis, B. Fallahazad, K. Lee, J. Xue, D. C. Dillen, C. M. Corbet, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

35. “Growth and Characterization of Coherently Strained Si-SixGe1−x Core-Shell Nanowire Heterostructures,” D. C. Dillen, K. Kim, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

34. “Chemical potential and tunneling in bilayer graphene using double bilayer graphene heterostructures,” E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

33. “Oxidized titanium as a graphene gate dielectric and its conduction mechanisms", C. M. Corbet, C. McClellan, K. Kim, S. Sonde, E. Tutuc, S. K. Banerjee, TECHCON 2014, Sept. 7-9, 2014, Austin, TX, U.S.A.

32. “Ultrathin gate dielectrics created from oxidized titanium for graphene field effect transistors”, C. M. Corbet, International Conference on the Physics of Semiconductors, Aug. 10-15, 2014, Austin, TX, U.S.A.

31. “Modulation doping in Ge-SixGe1-x core-shell nanowires”, D. C. Dillen, K. Kim, E.-S. Liu, E. Tutuc, 2014 MRS Spring Meeting, Apr. 21-25, 2014, San Francisco, CA, U.S.A.

30. “Carrier distribution and negative compressibility in graphene-MoS2 heterostructures”, S. Larentis, J. R. Tolsma, B. Fallahazad, D. C. Dillen, K. Kim, A. H. MacDonald, E. Tutuc, 2014 APS March Meeting, Mar. 3-7, 2014, Denver, CO, U.S.A.

29. Negative Compressibility and Charge Partitioning Between Graphene and MoS2 Two-Dimensional Electron Gases”, J. R. Tolsma, S. Larentis, E. Tutuc, A. H. MacDonald, 2014 APS March Meeting, Mar. 3-7, 2014, Denver, CO, U.S.A

28. “Mapping the chemical potential in bilayer graphene using double bilayer heterostructures”, K. Lee, B. Fallahazad, J. Xue, T. Taniguchi, K. Watanabe, E. Tutuc, 2014 APS March Meeting, Mar. 3-7, 2014, Denver, CO, U.S.A.

27. "Quantum Hall effect in graphene bilayers grown on copper by chemical vapor deposition", B. Fallahazad, Y. Hao, K. Lee, S. Kim, R. Ruoff, E. Tutuc, 2012 APS March Meeting, Feb. 27 – Mar. 2, 2012, Boston, MA, U.S.A.

26. “Raman spectroscopy and strain mapping in individual Ge-SixGe1-x core-shell nanowires”, D. C. Dillen, K. M. Varahramyan, E. Tutuc, 2012 APS March Meeting, Feb. 27 – Mar. 2, 2012, Boston, MA, U.S.A.

25. “Direct measurement of the Fermi energy in graphene using a double-layer heterostructure”, S. Kim, I. Jo, D. C. Dillen, D. A. Ferrer, B. Fallahazad, Z. Yao, S. K. Banerjee, E. Tutuc, 2012 APS March Meeting, Feb. 27 – Mar. 2, 2012, Boston, MA, U.S.A.

24. "Electrical characteristics of graphene A-B bilayers investigated using dual-gated device structures”, K. Lee, S. Kim, B. Fallahazad, E. Tutuc, TECHCON 2011, Sept. 12-13, 2011, Austin, TX, U.S.A.

23. “Gate capacitance scaling and graphene field-effect transistors with ultra-thin top-gate dielectrics”, B. Fallahazad, K. Lee, S. Kim, C. Corbet, E. Tutuc, 69th IEEE Device Research Conference, June 20-22, 2011, Santa Barbara, CA, U.S.A.

22. “Graphene field-effect transistors using large-area monolayer graphene grown by chemical vapor deposition on Co thin films”, M. E. Ramon, A. Gupta, C. Corbet, D. A. Ferrer, H. C. P. Mova, G. Carpenter, L. Colombo, G. Bourianoff, M. Doczy, D. Akinwande, E. Tutuc, S. K. Banerjee, 69th IEEE Device Research Conference Barbara, CA, U.S.A.

21. "Dielectric thickness dependence of carrier mobility in graphene with Al2O3 and HfO2 dielectrics", B. Fallahazad, S. Kim, L. Colombo, E. Tutuc, 2011 APS March Meeting, Mar 21-25, 2011, Dallas, TX, U.S.A.

20. "Electric field induced transition between spin to valley polarized ν=0 quantum Hall state in dual-gated graphene bilayers”, K. Lee, S. Kim, B. Fallahazad, E. Tutuc, 2010 APS March Meeting, March 21-25, 2010, Dallas, TX, U.S.A.

19. “Wire textured silicon solar cells”, K. Wang, O. Gunawan, N. Moumen, G. Tulevski, H. Mohamed, B. Fallahazad, E. Tutuc, S. Guha, IEEE 35th Photovoltaic Specialists Conference, June 20-25, 2010, Honolulu, HI, U.S.A.

18. “Capacitance analysis of wire-array solar cells”, O. Gunawan, B. Fallahazad, E. Tutuc, S. Guha, IEEE 35th Photovoltaic Specialists Conference, June 20-25, 2010, Honolulu, HI, U.S.A.

17. “Thickness dependence of carrier mobility in mono- and bi-layer graphene with HfO2 gate dielectric”, B. Fallahazad, S. Kim, L. Colombo, E. Tutuc, 68th IEEE Device Research Conference, Jun 21-23, 2010, South Bend, IN, U.S.A.

16. “Ge-SixGe1-x core-shell nanowire tunneling field-effect transistor”, J. Nah, Y. Kim, E. –S. Liu, K. M. Varahramyan, S. K. Banerjee, and E. Tutuc, 68th IEEE Device Research Conference, Jun 21-23, 2010, South Bend, IN, U.S.A.

15. “Quantum Hall effect in dual-gated graphene bilayers with tunable layer density imbalance” S. Kim, E. Tutuc, 2010 APS March Meeting, Mar 15-19, 2010, Portland, OR, U.S.A.

14. “Lateral spin injection in Germanium nanowires”, E.-S. Liu, J. Nah, K. M. Varahramyan, S. K. Banerjee, E. Tutuc, 2010 APS March Meeting, Mar 15-19, 2010, Portland, OR, U.S.A.

13. "Growth and electrical properties of Ge-SiGe core-shell nanowire heterostructure", J. Nah, K. M. Varahramyan, E. -S. Liu, A. Opotowsky, D. Ferrer, S. K. Banerjee, E. Tutuc, Proc. SPIE 74060, 74060O (2009)

12. "Top-gate Ge-SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain", J. Nah, E. -S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, E. Tutuc, 67th IEEE Device Research Conference, Jun 22-24, 2009, University Park, PA, U.S.A.

11. "Accurate inversion charge and mobility measurements in E-mode GaAs FETs with high-k gate dielectric", D. Shahrjerdi, J. Nah, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee, 67th IEEE Device Research Conference, Jun 22-24, 2009, University Park, PA, U.S.A.

10. "Top-gate Ge-SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain", J. Nah, E. -S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc, 2009 APS March Meeting, Mar 16-20, 2009, Pittsburgh, PA, U.S.A.

9. "High mobility dual-gated graphene field effect transistors with Al2O3 dielectric", S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. K. Banerjee, 2009 APS March Meeting, Mar 16-20, 2009, Pittsburgh, PA, U.S.A.

8. "Prospects of spin injection in Germanium nanowires", E. -S. Liu, K. M. Varahramyan, J. Nah, S. K. Banerjee, E. Tutuc, 2009 APS March Meeting, Mar 16-20, 2009, Pittsburgh, PA, U.S.A.

7. "Carrier mobility in graphene devices with High-k dielectrics", S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. K. Banerjee, TECHCON 2008, Nov 3-5, 2008, Austin, TX, U.S.A. 

6. “High-k dielectrics for Ge, III-V, and graphene”, S. K. Banerjee, E. Tutuc, S. Kim, T. Akyol, M. Jamil, D. Shahrjerdi, J. Donnelly, ECS Trans. 25, 285 (2008)

5. “Fabrication of self-aligned enhancement-mode n-channel GaAs MOSFETs employing a wet clean process for GaAs substrates”, D. Shahrjerdi, D. Garcia-Gutierrez, S. Kim, M. M. Hasan, K. M. Varahramyan, E. Tutuc, S. Banerjee, ECS Trans. 16, 59 (2008)

4. “Opportunities for Group IV Nanowire Devices in Si CMOS Technology”, E. Tutuc, S. K. Banerjee, J. Nah, K. Varahramyan, N. Jain, D. Ferrer, ECS Trans. 16, (10) 735 (2008).

3. "Impact of metal contact depth on device performance in back-gated nanowire field-effect-transistor", E.–S. Liu, N. Jain, K. M. Varahramyan, J. Nah, S. K. Banerjee, E. Tutuc, 66th IEEE Device Research Conference 2008, June 23-25, 2008, Santa Barbara, U.S.A.

2. "Performance analysis of Germanium tunneling field effect transistors", N. Jain, E. Tutuc, S.K. Banerjee, L. F. Register, 66th IEEE Device Research Conference 2008, June 23-25, 2008, Santa Barbara, CA, U.S.A.

1. "Negative differential resistance in buried-channel Ge1-xCx pMOSFET", E.–S. Liu, D. Q. Kelly, J. P. Donnelly, E. Tutuc, S. K. Banerjee, APS March Meeting 2008, March 10-14, 2008, New Orleans, U.S.A.

 

 

 

 

Last update 12/27/2019