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Journals

50. “Shell morphology and Raman spectra of epitaxial Ge−SixGe1−x and Si−SixGe1−x core-shell nanowires,” F. Wen, D. C. Dillen, K. Kim, and E. Tutuc, Journal of Applied Physics 121, 234302 (2017)

49. “Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures,” G. W. Burg, N. Prasad, B. Fallahazad, A. Valsaraj, K. Kim, T. Taniguchi, K. Watanabe, Q. Wang, M. J. Kim, L. F. Register, and E. Tutuc, Nano Letters, 10.1021/acs.nanolett.7b01505 (2017)

48. “Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits,” S. Larentis, B. Fallahazad, H. C. P. Movva, K. Kim, A. Rai, T. Taniguchi, K. Watanabe, S. K. Banerjee, E. Tutuc, ACS Nano, DOI: 10.1021/acsnano.7b01306 (2017)

47. “Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene,” K. Kim, A. DaSilva, S. Huang, B. Fallahazad, S. Larentis, T. Taniguchi, K. Watanabe, B. LeRoy, A. H. MacDonald, E. Tutuc, Proc Natl Acad Sci, 114, 13 (2017)

46. “Laser Spike Annealing for Shallow Junctions in Ge CMOS,” W. Hsu, F. Wen, X. Wang, Y. Wang, A. Dolocan, A. Roy, T. Kim, E. Tutuc, S. K Banerjee, IEEE Transactions on Electron Devices ( Volume: 64, Issue: 2, Feb.) (2017)

45. “Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors,”SKang, N. Prasad, HC. Movva, A. Rai, K. Kim, X. Mou, T. Taniguchi, K. Watanabe, LF. Register, E. Tutuc, SK. Banerjee, Nano Letters. 16(8):4975-81 (2016)

44. “Giant Frictional Drag in Double Bilayer Graphene Heterostructures,” K. Lee, J. Xue, D. C. Dillen, K. Watanabe, T. Taniguchi, and E. Tutuc, Phys. Rev. Lett. 117, 046803 (2016)

43. “High Phosphorous Dopant Activation in Germanium Using Laser Spike Annealing,” W. Hsu, X. Wang, F. Wen, Y. Wang, A. Dolocan, T. Kim, E. Tutuc, S. Banerjee, IEEE Electron Device Letters (Volume:PP , Issue: 99 ) (2016)

42. “Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility,” B. Fallahazad, H. C. P. Movva, K. Kim, S. Larentis, T. Taniguchi, K. Watanabe, S. K. Banerjee, and E. Tutuc, Phys. Rev. Lett. 116, 086601 (2016)

41. “van der Waals Heterostructures with High Accuracy Rotational Alignment,” K. Kim, M. Yankovitz, B. Fallahazad, S. Kang, H. C. P. Movva, S. Huang, S. Larentis, C. M. Corbet, T. Taniguchi, K. Watanabe, S. K. Banerjee, B. J. LeRoy, and E. Tutuc, Nano Lett., 2016, 16 (3), pp 1989–1995 (2016)

40. “Coherently Strained Si–SixGe1–x Core–Shell Nanowire Heterostructures,” D. C. Dillen, F. Wen, K. Kim, E. Tutuc, Nano Lett., 2016, 16 (1), pp 392–398 (2016)

39. “Strain and Hole Gas Induced Raman Shifts in Ge–SixGe1–x Core–Shell Nanowires Using Tip-Enhanced Raman Spectroscopy,” Z. Zhang, D. C. Dillen, E. Tutuc, and E. T. Yu, Nano Lett., 2015, 15 (7), pp 4303–4310 (2015)

38. “Band Alignment in WSe2–Graphene Heterostructures,” K. Kim, S. Larentis, B. Fallahazad, K. Lee, J. Xue, D. C. Dillen, C. M. Corbet, E. Tutuc, ACS Nano 9, 4527 (2015)

37. “Gate-tunable resonant tunneling in double bilayer graphene heterostructures”, B. Fallahazad , K. Lee, S. Kang, J. Xue, S. Larentis, C. Corbet, K. Kim, H. C. P. Movva, T. Taniguchi, K. Watanabe, L. F. Register, S. K. Banerjee, E. Tutuc, Nano Lett. 15, 428 (2015)

36. “Field effect transistors with current saturation and voltage gain in ultrathin ReS2”, C. M. Corbet, C. McClellan, A. Rai, S. Sonde, E. Tutuc, S. K. Banerjee, ACS Nano 9, 363 (2014)

35. “Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms”, C. M. Corbet, C. McClellan, K. Kim, S. Sonde, E. Tutuc, S. K. Banerjee, ACS Nano 8, 10480 (2014)

34. “Chemical potential and quantum hall ferromagnetism in bilayer graphene”, K. Lee, B. Fallahazad, J. Xue, D. C. Dillen, K. Kim, T. Taniguchi, K. Watanabe, E. Tutuc, Science 345, 58 (2014)

33. “Band offset and negative compressibility in graphene-MoS2 heterostructures”, S. Larentis, J. R. Tolsma, B. Fallahazad, D. C. Dillen, K. Kim, A. H. MacDonald, E. Tutuc, Nano Lett. 14, 2039 (2014)

32. “Radial modulation doping in core-shell nanowires”, D. C. Dillen, K. Kim, E.-S. Liu, E. Tutuc, Nature Nanotech. 9, 116 (2014)

31. “Realization and Scaling of Ge-Si1-xGex Core-Shell Nanowire n-FETs” E.-S. Liu, D. C. Dillen, J. Nah, B. Fallahazad, K. Kim, E. Tutuc, IEEE Trans. on Elec. Dev. 60, 4027 (2013)

30. “Transport gap in dual-gated graphene bilayers using oxides as dielectrics”, K. Lee, B. Fallahazad, H. Min, E. Tutuc, IEEE Trans. on Elec. Dev. 60, 103 (2013)

29. “Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers”, S. Larentis, B. Fallahazad, E. Tutuc, Appl. Phys. Lett. 101, 223104 (2012)

28. “Raman spectroscopy and strain mapping in individual Ge-SixGe1-x core-shell nanowires”, D. C. Dillen, K. M. Varahramyan, C. M. Corbet, E. Tutuc, Phys. Rev. B 86, 045311 (2012)

27. “Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition”, B. Fallahazad, Y. Hao, K. Lee, S. Kim, R. S. Ruoff, E. Tutuc, Phys. Rev. B 85, 201408 (2012)

26. “Direct measurement of the Fermi energy in graphene using a double-layer heterostructure”, S. Kim, I. Jo, D. C. Dillen, D. A. Ferrer, B. Fallahazad, Z. Yao, S. K. Banerjee, E. Tutuc, Phys. Rev. Lett. 108, 116404 (2012)

25. “Scaling of Al2O3 dielectric for graphene field-effect transistors”, B. Fallahazad, K. Lee, G. Lian, S. Kim, C. M. Corbet, D. A. Ferrer, L. Colombo, E. Tutuc, Appl. Phys. Lett. 100, 093112 (2012)

24. “Role of confinement on carrier transport in Ge-SixGe1-x core-shell nanowires”, J. Nah, D. C. Dillen, K. M. Varahramyan, S. K. Banerjee, E. Tutuc, Nano Lett. 12, 108 (2012)

23. “Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: evidence for Bernal stacking”, K. Lee, S. Kim, M. S. Points, T. E. Beechem, T. Ohta, E. Tutuc, Nano Lett. 11, 3624 (2011)

22. “Spin-polarized to valley-polarized transition in graphene bilayers at n=0 in high magnetic fields”, S. Kim, K. Lee, E. Tutuc, Phys. Rev. Lett. 107, 016803 (2011)

21. “Coulomb drag of massless fermions in graphene”, S. Kim, I. Jo, J. Nah, Z. Yao, S. K. Banerjee, E. Tutuc, Phys. Rev. B 83, 161401 (2011)

20. “Low-frequency acoustic phonon temperature distribution in electrically biased graphene”, I. Jo, I. K. Hsu, Y. J. Lee, M. M. Sadeghi, S. Kim, S. Cronin, E. Tutuc, S. K. Banerjee, Z. Yao, L. Shi, Nano Lett. 11, 85 (2011)

19. “High performance wire-array silicon solar cells”, O. Gunawan, K. Wang, B. Fallahazad, Y. Zhang, E. Tutuc, S. Guha, Progress in Photovoltaics: Research and Applications 19, 307 (2011)

18. “On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems”, A. Hosseini, D. Kwong, Y. Zhang, S. A. Chandorkar, F. Crnogorac, A. Carlson, B. Fallahazad, S. Bank, E. Tutuc, J. Rogers, R. F. W. Pease, R. T. Chen, J. Vac. Sci. & Tech. B 28, C6O1 3511508 (2010)

17. “Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric”, D. Shahrjerdi, J. Nah, B. Hekmatshoar, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee, Appl. Phys. Lett. 97, 213506 (2010)

16. “Graphene for CMOS and beyond CMOS applications”, S. K. Banerjee, L. F. Register, E. Tutuc, D. Basu, S. Kim, D. Reddy, A. H. MacDonald, Proc. of the IEEE 98, 2032 (2010)

15. “Wire textured, multi-crystalline Si solar cells created using self-assembled masks”, K. Wang, O. Gunawan, N. Moumen, G. Tulevski, H. Mohamed, B. Fallahazad, E. Tutuc, S. Guha, Optics Express 18, A568 (2010)

14. “Lateral spin injection in Germanium nanowires”, E.-S. Liu, J. Nah, K. M. Varahramyan, E. Tutuc, Nano Lett. 10, 3297 (2010)

13. “Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric”, B. Fallahazad, S. Kim, L. Colombo, E. Tutuc, Appl. Phys. Lett. 97, 123105 (2010)

12. “Enhanced-performance germanium nanowire tunneling field-effect transistors using flash-assisted rapid thermal process”, J. Nah, E.-S. Liu, K. M. Varahramyan, D. Dillen, S. McCoy, J. Chan, E. Tutuc, IEEE Elec. Dev. Lett. 31, 1359 (2010)

11. "Ge-Si(x)Ge(1-x) core-shell nanowire tunneling field-effect transistors", J. Nah, E.-S. Liu, K. M. Varahramyan, E. Tutuc, IEEE Trans. on Elec. Dev. 57, 1883 (2010)

10. “Effects of Si-cap thickness and temperature on device performance of Si/Ge(1-x)C(x)/Si p-MOSFETs”, M. Jamil, E.-S. Liu, F. Ferdousi, J. P. Donnelly, E. Tutuc, S. K. Banerjee, Semicond. Sci. and Tech. 25, 045005 (2010)

9. "Role of metal-semiconductor contact in back-gated nanowire field-effect-transistor", E. –S. Liu, N. Jain, K. M. Varahramyan, J. Nah, S. K. Banerjee, E. Tutuc, IEEE Trans. on Nanotech. 9, 237 (2010)

8. "Scaling properties of Ge-Si(x)Ge(1-x) core-shell nanowire field-effect transistors", J. Nah, E.-S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, E. Tutuc, IEEE Trans. on Elec. Dev. 57, 491 (2010)

7. "Band Engineered Epitaxial Ge-Si(x)Ge(1-x) nanowire core-shell heterostructures", K. M. Varahramyan, D. Ferrer, E. Tutuc, S. K. Banerjee, Appl. Phys. Lett. 95, 033101 (2009)

6. "Large Area Synthesis of High-quality and uniform graphene films", X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, R. S. Ruoff, Science 324, 1312 (2009)

5. “Negative differential resistance in buried-channel Ge(1-x)C(x) pMOSFETs", E.-S. Liu, D. Q. Kelly, J. P. Donnelly, E. Tutuc, S. K. Banerjee, IEEE Elec. Dev. Lett. 30, 136 (2009)

4. "Realization dual-gated Ge-Si(x)Ge(1-x) core-shell nanowire field effect transistors with highly doped source and drain", J. Nah, E.-S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc., Appl. Phys. Lett. 94, 063117 (2009)

3. "Realization of a high mobility dual-gated graphene field effect transistor with thin Al2O3 dielectrics", S. Kim, J. Nah, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. K. Banerjee, Appl. Phys. Lett. 94, 062107 (2009)

2. "Opportunities for group IV nanowire devices in Si CMOS technology", E. Tutuc, S. K. Banerjee, J. Nah, K. M. Varahramyan, N. Jain, D. Ferrer, Electrochemical Society Transactions 16, 735 (2008)

1. "Doping of Ge-Si(x)Ge(1-x) core-shell nanowires using low energy ion implantation", J. Nah, K. M. Varahramyan, E.-S. Liu, S. K. Banerjee E. Tutuc, Appl. Phys. Lett. 93, 203108 (2008)

Conferences

40. “Spin Hall Effect in Monolayer and Bilayer WSe2,” B. Fallahazad, Hema C. P. Movva, X. Li, T. Taniguchi, K. Watanabe, Q. Nui, S. Banerjee, and E. Tutuc, APS March Meeting 2017, March 13-17, New Orleans, LA, U.S.A.

39. “Colossal Coulomb Drag in Double Bilayer Graphene Heterostructures,” K. Lee, J. Xue, T. Taniguchi, K. Watanabe, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

38. “Resonant Tunneling in Double Bilayer Graphene Heterostructures,” B. Fallahazad, K. Lee, S. Kang, J. Xue, S. Larentis, C. M. Corbet, K. Kim, H. Movva, T. Taniguchi, K. Watanabe, L. Register, S. Banerjee, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

37. “Semiconducting Behavior, Schottky Barriers and Field Effect Transistors in Ultrathin Rhenium DiSulfide,” C. M. Corbet, C. McClellan, A. Rai, S. Sonde, E. Tutuc, and S. Banerjee, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

36. “Conduction and Valence Band Offsets in WSe2-Graphene Heterostructures,” K. Kim, S. Larentis, B. Fallahazad, K. Lee, J. Xue, D. C. Dillen, C. M. Corbet, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

35. “Growth and Characterization of Coherently Strained Si-SixGe1−x Core-Shell Nanowire Heterostructures,” D. C. Dillen, K. Kim, and E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

34. “Chemical potential and tunneling in bilayer graphene using double bilayer graphene heterostructures,” E. Tutuc, APS March Meeting 2015, March 2-6, San Antonio, TX, U.S.A.

33. “Oxidized titanium as a graphene gate dielectric and its conduction mechanisms", C. M. Corbet, C. McClellan, K. Kim, S. Sonde, E. Tutuc, S. K. Banerjee, TECHCON 2014, Sept. 7-9, 2014, Austin, TX, U.S.A.

32. “Ultrathin gate dielectrics created from oxidized titanium for graphene field effect transistors”, C. M. Corbet, International Conference on the Physics of Semiconductors, Aug. 10-15, 2014, Austin, TX, U.S.A.

31. “Modulation doping in Ge-SixGe1-x core-shell nanowires”, D. C. Dillen, K. Kim, E.-S. Liu, E. Tutuc, 2014 MRS Spring Meeting, Apr. 21-25, 2014, San Francisco, CA, U.S.A.

30. “Carrier distribution and negative compressibility in graphene-MoS2 heterostructures”, S. Larentis, J. R. Tolsma, B. Fallahazad, D. C. Dillen, K. Kim, A. H. MacDonald, E. Tutuc, 2014 APS March Meeting, Mar. 3-7, 2014, Denver, CO, U.S.A.

29. Negative Compressibility and Charge Partitioning Between Graphene and MoS2 Two-Dimensional Electron Gases”, J. R. Tolsma, S. Larentis, E. Tutuc, A. H. MacDonald, 2014 APS March Meeting, Mar. 3-7, 2014, Denver, CO, U.S.A

28. “Mapping the chemical potential in bilayer graphene using double bilayer heterostructures”, K. Lee, B. Fallahazad, J. Xue, T. Taniguchi, K. Watanabe, E. Tutuc, 2014 APS March Meeting, Mar. 3-7, 2014, Denver, CO, U.S.A.

27. "Quantum Hall effect in graphene bilayers grown on copper by chemical vapor deposition", B. Fallahazad, Y. Hao, K. Lee, S. Kim, R. Ruoff, E. Tutuc, 2012 APS March Meeting, Feb. 27 – Mar. 2, 2012, Boston, MA, U.S.A.

26. “Raman spectroscopy and strain mapping in individual Ge-SixGe1-x core-shell nanowires”, D. C. Dillen, K. M. Varahramyan, E. Tutuc, 2012 APS March Meeting, Feb. 27 – Mar. 2, 2012, Boston, MA, U.S.A.

25. “Direct measurement of the Fermi energy in graphene using a double-layer heterostructure”, S. Kim, I. Jo, D. C. Dillen, D. A. Ferrer, B. Fallahazad, Z. Yao, S. K. Banerjee, E. Tutuc, 2012 APS March Meeting, Feb. 27 – Mar. 2, 2012, Boston, MA, U.S.A.

24. "Electrical characteristics of graphene A-B bilayers investigated using dual-gated device structures”, K. Lee, S. Kim, B. Fallahazad, E. Tutuc, TECHCON 2011, Sept. 12-13, 2011, Austin, TX, U.S.A.

23. “Gate capacitance scaling and graphene field-effect transistors with ultra-thin top-gate dielectrics”, B. Fallahazad, K. Lee, S. Kim, C. Corbet, E. Tutuc, 69th IEEE Device Research Conference, June 20-22, 2011, Santa Barbara, CA, U.S.A.

22. “Graphene field-effect transistors using large-area monolayer graphene grown by chemical vapor deposition on Co thin films”, M. E. Ramon, A. Gupta, C. Corbet, D. A. Ferrer, H. C. P. Mova, G. Carpenter, L. Colombo, G. Bourianoff, M. Doczy, D. Akinwande, E. Tutuc, S. K. Banerjee, 69th IEEE Device Research Conference Barbara, CA, U.S.A.

21. "Dielectric thickness dependence of carrier mobility in graphene with Al2O3 and HfO2 dielectrics", B. Fallahazad, S. Kim, L. Colombo, E. Tutuc, 2011 APS March Meeting, Mar 21-25, 2011, Dallas, TX, U.S.A.

20. "Electric field induced transition between spin to valley polarized ν=0 quantum Hall state in dual-gated graphene bilayers”, K. Lee, S. Kim, B. Fallahazad, E. Tutuc, 2010 APS March Meeting, March 21-25, 2010, Dallas, TX, U.S.A.

19. “Wire textured silicon solar cells”, K. Wang, O. Gunawan, N. Moumen, G. Tulevski, H. Mohamed, B. Fallahazad, E. Tutuc, S. Guha, IEEE 35th Photovoltaic Specialists Conference, June 20-25, 2010, Honolulu, HI, U.S.A.

18. “Capacitance analysis of wire-array solar cells”, O. Gunawan, B. Fallahazad, E. Tutuc, S. Guha, IEEE 35th Photovoltaic Specialists Conference, June 20-25, 2010, Honolulu, HI, U.S.A.

17. “Thickness dependence of carrier mobility in mono- and bi-layer graphene with HfO2 gate dielectric”, B. Fallahazad, S. Kim, L. Colombo, E. Tutuc, 68th IEEE Device Research Conference, Jun 21-23, 2010, South Bend, IN, U.S.A.

16. “Ge-SixGe1-x core-shell nanowire tunneling field-effect transistor”, J. Nah, Y. Kim, E. –S. Liu, K. M. Varahramyan, S. K. Banerjee, and E. Tutuc, 68th IEEE Device Research Conference, Jun 21-23, 2010, South Bend, IN, U.S.A.

15. “Quantum Hall effect in dual-gated graphene bilayers with tunable layer density imbalance” S. Kim, E. Tutuc, 2010 APS March Meeting, Mar 15-19, 2010, Portland, OR, U.S.A.

14. “Lateral spin injection in Germanium nanowires”, E.-S. Liu, J. Nah, K. M. Varahramyan, S. K. Banerjee, E. Tutuc, 2010 APS March Meeting, Mar 15-19, 2010, Portland, OR, U.S.A.

13. "Growth and electrical properties of Ge-SiGe core-shell nanowire heterostructure", J. Nah, K. M. Varahramyan, E. -S. Liu, A. Opotowsky, D. Ferrer, S. K. Banerjee, E. Tutuc, Proc. SPIE 74060, 74060O (2009)

12. "Top-gate Ge-Si(x)Ge(1-x) core-shell nanowire field effect transistors with highly doped source and drain", J. Nah, E. -S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, E. Tutuc, 67th IEEE Device Research Conference, Jun 22-24, 2009, University Park, PA, U.S.A.

11. "Accurate inversion charge and mobility measurements in E-mode GaAs FETs with high-k gate dielectric", D. Shahrjerdi, J. Nah, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee, 67th IEEE Device Research Conference, Jun 22-24, 2009, University Park, PA, U.S.A.

10. "Top-gate Ge-Si(x)Ge(1-x) core-shell nanowire field effect transistors with highly doped source and drain", J. Nah, E. -S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc, 2009 APS March Meeting, Mar 16-20, 2009, Pittsburgh, PA, U.S.A.

9. "High mobility dual-gated graphene field effect transistors with Al2O3 dielectric", S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. K. Banerjee, 2009 APS March Meeting, Mar 16-20, 2009, Pittsburgh, PA, U.S.A.

8. "Prospects of spin injection in Germanium nanowires", E. -S. Liu, K. M. Varahramyan, J. Nah, S. K. Banerjee, E. Tutuc, 2009 APS March Meeting, Mar 16-20, 2009, Pittsburgh, PA, U.S.A.

7. "Carrier mobility in graphene devices with High-k dielectrics", S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. K. Banerjee, TECHCON 2008, Nov 3-5, 2008, Austin, TX, U.S.A. 

6. “High-k dielectrics for Ge, III-V, and graphene”, S. K. Banerjee, E. Tutuc, S. Kim, T. Akyol, M. Jamil, D. Shahrjerdi, J. Donnelly, ECS Trans. 25, 285 (2008)

5. “Fabrication of self-aligned enhancement-mode n-channel GaAs MOSFETs employing a wet clean process for GaAs substrates”, D. Shahrjerdi, D. Garcia-Gutierrez, S. Kim, M. M. Hasan, K. M. Varahramyan, E. Tutuc, S. Banerjee, ECS Trans. 16, 59 (2008)

4. “Opportunities for Group IV Nanowire Devices in Si CMOS Technology”, E. Tutuc, S. K. Banerjee, J. Nah, K. Varahramyan, N. Jain, D. Ferrer, ECS Trans. 16, (10) 735 (2008).

3. "Impact of metal contact depth on device performance in back-gated nanowire field-effect-transistor", E.–S. Liu, N. Jain, K. M. Varahramyan, J. Nah, S. K. Banerjee, E. Tutuc, 66th IEEE Device Research Conference 2008, June 23-25, 2008, Santa Barbara, U.S.A.

2. "Performance analysis of Germanium tunneling field effect transistors", N. Jain, E. Tutuc, S.K. Banerjee, L. F. Register, 66th IEEE Device Research Conference 2008, June 23-25, 2008, Santa Barbara, CA, U.S.A.

1. "Negative differential resistance in buried-channel Ge(1-x)C(x) pMOSFET", E.–S. Liu, D. Q. Kelly, J. P. Donnelly, E. Tutuc, S. K. Banerjee, APS March Meeting 2008, March 10-14, 2008, New Orleans, U.S.A.

Last update 4/4/2017